Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-30T00:03:00.961Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition, Characterization, and Application of Aluminum Nitride Thin Films for Microelectronics

Published online by Cambridge University Press:  15 February 2011

C. Yu ,
S. Kim ,
S. Meikle ,
T. T. Doan  and
G. Blalock
C. Yu
Affiliation:
R&D, Micron Technology Inc.2805 E. Columbia Road Boise, ID 83706
S. Kim
Affiliation:
R&D, Micron Technology Inc.2805 E. Columbia Road Boise, ID 83706
S. Meikle
Affiliation:
R&D, Micron Technology Inc.2805 E. Columbia Road Boise, ID 83706
T. T. Doan
Affiliation:
R&D, Micron Technology Inc.2805 E. Columbia Road Boise, ID 83706
G. Blalock
Affiliation:
R&D, Micron Technology Inc.2805 E. Columbia Road Boise, ID 83706
Get access

Abstract

In this paper we report on a high rate (˜ 100 nm/min) aluminum nitride (AIN) deposition process, as well as several novel applications of AIN thin films for microelectronics and optoelectronics applications. Surface morphology and chemical composition, etchability, etch selectivity to oxide, and step coverage at various deposition temperatures have been investigated by atomic force microscope (AFM), scanning electron microscope (SEM) and Auger spectroscope (AES). In addition, for the first time, chemical mechanical polishing (CMP) of AIN films has been carried out and a polishing rate of 270 nm/min has been achieved. Results of several novel processes involving AIN as an etchstop layer in microelectronics and as an optical interconnection in opto-electronics will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 264: Symposium G – Electronic Packaging Materials Science VI , 1992 , 401
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hasegawa, F., Takahashi, T., Kubo, K., Onnari, S., Nannichi, Y. and Arai, T., Jpn. J. Appl. Phys. 26, L1448 (1987).Google Scholar
2. Osaka, T., Asada, T., Nakajima, E. and Koiwa, I., J. Electrochem. Soc. 135, 2379 (1988).Google Scholar
3. Shiosaki, T., Harada, K. and Kawabata, A., Jpn. J. Appl. Phys. 21, 69 (1982).Google Scholar
4. Arnold, H., Biste, L. and Kaufmann, Th., Kristall und Technik 13, 929 (1978).Google Scholar
5. Gordon, R., Hoffman, D. and Riaz, U., J. Mater. Res. 6, 5 (1991).Google Scholar
6. Yoshida, S., Mvisawa, S., Fujii, Y., Takada, S., Hayakawa, H., Gonda, S. and Itoh, A., J. Vac. Sci. Tech. 16, 990 (1979).Google Scholar
7. Svub, J., Musil, J., Czech. J. Phys. B33, 1191 (1985).Google Scholar
8. Gerova, F.V., Ivanov, N.A. and Kirov, K.I., Thin Solid Films 81, 201 (1981).CrossRefGoogle Scholar