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Deposition Kinetics and Structural Control of Highly Photosensitive A-SiGe:H Alloys

Published online by Cambridge University Press:  28 February 2011

Kazunobu Tanaka  and
Akihisa Matsuda
Kazunobu Tanaka
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Niihari-gun, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Niihari-gun, Ibaraki 305, Japan
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Abstract

Firstly, on the basis of the classical model on the surface process of adsorbed species, a guiding principle is proposed for the preparation of high-quality a-SiGe:H alloys via plasma-CVD technique. Secondly, a- SiGe:H alloys were prepared by the rf-discharge technique with three intentional modifications; (A) from SiH4/GeH4 using a diode reactor (conventional method), (B) from SiH4/GeH4 using a triode reactor (triode method), (C) from SiH4/GeH4/H2 mixture using the diode reactor (H2-dilution method). Finally, growth mechanism is discussed in terms of the selection of long-lifetime radicals in a plasma and the H-coverage factor of the growing surface, providing us a clue to materials design.

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References

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