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Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process

Published online by Cambridge University Press:  21 February 2011

C. Wang ,
G. Lucovsky  and
R. J. Nemanich
C. Wang
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. J. Nemanich
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

We have extended the remote PECVD process to the deposition of intrinsic and doped, amorphous and microcrystalline silicon, carbon alloy films, a-Si,C:H and μc-Si,C, respectively. The electrical and optical properties of a-Si,C:H deposited by remote PECVD are comparable to those of films deposited by the glow discharge or GD process. The degree of crystallinity in the μc-Si,C alloys, as determined from the relative intensities of crystalline and amorphous features in the Raman spectra, is lower than that of μc-Si films deposited under comparable deposition conditions. The Raman spectra indicate that the crystallites in the μc-Si,C alloys are Si, while the infrared measurements establish that the intervening amorphous component is an a-Si,C:H alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 751
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. LeComber, P.E., J. Non-Cryst. Solids 115, 1 (1989).CrossRefGoogle Scholar
2. Hamakawa, Y., Toyama, T. and Okamoto, H., J. Non-Cryst. Solids 115, 180 (1989).Google Scholar
3. Parsons, G.N., Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol. A6, 1912 (1984).Google Scholar
4. Wang, C., Parsons, G.N., Buehler, E.C., Nemanich, R.J. and Lucovsky, G.. MRS Symp. Proc. 192, 535 (1990).Google Scholar
5. Wang, C., Williams, M.J. and Lucovsky, G., presented at the 37th Annual AVS Nat. Symp. Toronto, Canada, October, 1990; to be published in J. Vac. Sci. Technol A, 1991.Google Scholar
6. Wang, C., Bjorkman, C.H, Lee, D.R., Williams, M.J. and Lucovsky, G.. MRS Symp Proc. 204, (1990), in press.Google Scholar
7. Lucovsky, G. and Wang, C., these MRS proceedings.Google Scholar