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Deposition of a-Si Films Using Silane Molecular Beams Excited by Heated Wire and ArF Laser

Published online by Cambridge University Press:  28 February 2011

M. Hanabusa ,
T. Tsuboi ,
T. Sato ,
S. Furuno ,
S. Iguchi  and
T. Inoue
M. Hanabusa
Affiliation:
Department of Electrical Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
T. Tsuboi
Affiliation:
Department of Electrical Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
T. Sato
Affiliation:
Department of Electrical Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
S. Furuno
Affiliation:
Higashifuji Technical Center, Toyota Motor Co., Susono, Shizuoka 410-11, Japan
S. Iguchi
Affiliation:
Higashifuji Technical Center, Toyota Motor Co., Susono, Shizuoka 410-11, Japan
T. Inoue
Affiliation:
Higashifuji Technical Center, Toyota Motor Co., Susono, Shizuoka 410-11, Japan
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Abstract

Amorphous silicon films were deposited by using silane molecular beams excited either by ArF laser beams or heated tungsten wires. Reaction mechanisms are discussed on the basis of the dependence of deposition rates on substrate temperature and, in the case of the heated-wire method, on wire temperature.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 209
Copyright
Copyright © Materials Research Society 1987

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References

1. Ramsey, N. F., Molecular Beams (Oxford, Glasgow, 1956).Google Scholar
2. Hanabusa, M., Sugai, K., Tsuboi, T., Furuno, S., Iguchi, S. and Inoue, T., in Proc. of Synposium D, 1985 MRS Fall Meeting, Boston 1986, edited by von Gutfeld, R. J., Greene, J. E. and Schlossberg, H., p.97.Google Scholar
3. Furuno, S., Akihama, K., Hanabusa, M., Iguchi, S. and Inoue, T., Combust. Flame 54, 149 (1983).Google Scholar