Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-10T11:02:42.498Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices

Published online by Cambridge University Press:  11 February 2011

Tohru Honda ,
Kenichi Iga ,
Hideo Kawanishi ,
Takahiro Sakaguchi  and
Fumio Koyama
Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Kenichi Iga
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Takahiro Sakaguchi
Affiliation:
P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Fumio Koyama
Affiliation:
P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Get access

Abstract

GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.31
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Honda, T., Maki, K. and Kawanishi, H., IPAP Conf. Series 1, 644 (2000).Google Scholar
[2] Yagi, S., Jpn. J. Appl. Phys. 38, L792 (1999).Google Scholar
[3] Tampo, H., Asahi, H., Hiroki, M., Imanishi, Y., Asami, K. and Gonda, S., J. Cryst. Growth 189/190, 218 (1998).Google Scholar
[4] Honda, T., Sato, K., Hashimoto, T., Shinohara, M. and Kawanishi, H., Phys. Stat. Sol. 188, 587 (2001).Google Scholar
[5] Kurai, S., Naoi, Y., Abe, T., Ohmi, S. and Sakai, S., Jpn. J. Appl. Phys. 35, L77 (1996).Google Scholar
[6] Nishino, K. and Sakai, S., Gallium Nitride and Related Semiconductors, eds. Edgar, J. H., Stride, S., Akasaki, I., Amano, H. and Wetzel, C., INSPEC, London 1999 (p 367).Google Scholar
[7] Honda, T., Inao, Y., Konno, K., Mineo, K., Kumabe, S. and Kawanishi, H., Phys. Stat. Sol., in press.Google Scholar
[8] Kamp, M., Mayer, M.. Pelezmann, A. and Ebeling, K. J., Mat. Res. Soc. Symp. Proc. 449, 191 (1997).Google Scholar
[9] Harrison, W. A., Electronic Structure and The Properties of Solids (Dover, New York, 1989) p. 66.Google Scholar
[10] Koukitu, A. and Seki, H., Jpn. J. Appl. Phys. 36, L750 (1997).Google Scholar