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Deposition of Photoluminescent Nanocrystalline Silicon Films by SiF4-SiH4-H2 Plasmas

Published online by Cambridge University Press:  15 February 2011

G. Cicala ,
G. Bruno ,
P. Capezzuto ,
L. Schiavulli ,
V. Capozzi  and
G. Perna
G. Cicala
Affiliation:
Centro di Studio per la Chimica dei Plasmi C.N.R, c/o Dipartimento di Chimica, Università di Bari, Via Orabona, 4 – 70126 Bari, Italy, cscpgc07@area.ba.cnr.it
G. Bruno
Affiliation:
Centro di Studio per la Chimica dei Plasmi C.N.R, c/o Dipartimento di Chimica, Università di Bari, Via Orabona, 4 – 70126 Bari, Italy, cscpgc07@area.ba.cnr.it
P. Capezzuto
Affiliation:
Centro di Studio per la Chimica dei Plasmi C.N.R, c/o Dipartimento di Chimica, Università di Bari, Via Orabona, 4 – 70126 Bari, Italy, cscpgc07@area.ba.cnr.it
L. Schiavulli
Affiliation:
Dipartimento di Fisica, Università di Bari, and Istituto Nazionale di Fisica della Materia, Via Orabona, 4 – 70126 Bari, Italy.
V. Capozzi
Affiliation:
Dipartimento di Fisica, Università di Bari, and Istituto Nazionale di Fisica della Materia, Via Orabona, 4 – 70126 Bari, Italy.
G. Perna
Affiliation:
Dipartimento di Fisica, Università di Bari, and Istituto Nazionale di Fisica della Materia, Via Orabona, 4 – 70126 Bari, Italy.
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Abstract

Visible photoluminescence at 1.62 eV has been observed at room temperature from fluorinated and hydrogenated nanocrystalline silicon (nc-Si:H,F) produced in a typical plasma enhanced chemical vapor deposition system. The use of SiF4-SiH4-H2 mixture, because of the H2 dilution and the presence of SiF4, favours the amorphous - crystalline transition through the etching process of the amorphous phase. The x - ray diffraction measurements give an average grain size of about 100 Å. The presence of these nanocrystals shifts the absorption edge of the films towards higher energy. An energy gap of 2.12 eV is estimated, although the hydrogen content in the material is only 4.5 at. %. The temperature dependence of the photoluminescence behaves similarly to that of porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 809
Copyright
Copyright © Materials Research Society 1997

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References

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