Published online by Cambridge University Press: 15 February 2011
For the formation of single layers and layer systems the depth homogeneity of porous silicon (PS) plays a key role. We have measured qualitatively and quantitatively structural gradients in p-PS layers with increasing layer thicknesses by fitting reflectance spectra in the infrared and by measuring thickness oscillations in the reflectance during the formation of PS layers. These results allow us to give recipes for the formation of PS layers with a homogenous optical thickness in depth.