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Depth Variation of Transport Parameters in Poly-Si Under Am1 Illumination

Published online by Cambridge University Press:  21 February 2011

Z. Chen  and
L.C. Burton
Z. Chen
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
L.C. Burton
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
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Abstract

Abstract; Grain boundary (GB) recombination is a controlling factor in the electronic properties of polycrystalline silicon. We would like to report computer modeling of the variation of electron transport parameters with depth, under illumination. The GB barrier height (Vg) versus photogeneration rate G and depth are presented, along with the resulting electron lifetime (π), mobility (µ) and diffusion length (L). Under AM1 illumination, Vg increases whereas -π, µ and L all decrease drastically with increasing depth. The GB trap density is used as a parameter, and strongly influences transport parameters in both dark and light cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 173
Copyright
Copyright © Materials Research Society 1990

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