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Depth-profiling Pore Morphology in Nanoporous Thin Films Using Positronium Lifetime Annihilation Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Richard S. Vallery ,
Hua-Gen Peng ,
William E. Frieze ,
David W. Gidley ,
Darren L. Moore  and
Richard J. Carter
Richard S. Vallery
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Hua-Gen Peng
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
William E. Frieze
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
David W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Darren L. Moore
Affiliation:
LSI Logic Corporation, 23400 NE Gilsan Street, Gresham, OR 97030
Richard J. Carter
Affiliation:
LSI Logic Corporation, 23400 NE Gilsan Street, Gresham, OR 97030
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Abstract

Positronium annihilation lifetime spectroscopy (PALS) using a positron beam is a proven technique to characterize porosity in amorphous thin film materials. The capability to control the depth of the implanted positrons is unique to beams as compared to traditional bulk PALS techniques. By increasing the positron beam energy, positrons are implanted deeper into the film. Control of the positron implantation depth in beam-PALS allows analysis of sub- micron films, investigation of depth-dependent film inhomogeneities, determination of pore interconnection lengths, and access to buried films under barrier layers. Details on PALS depth profiling and an example of applying the technique to a plasma-enhanced-chemical-vapor- deposited (PECVD) porous film are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B1.6
Copyright
Copyright © Materials Research Society 2005

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