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Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

Published online by Cambridge University Press:  01 February 2011

Ashok K Sood ,
Rajwinder Singh ,
Yash R Puri ,
Frederick W Clarke ,
Amir Dabiran ,
Peter Chow ,
Jie Deng  and
James C.M. Hwang
Ashok K Sood
Affiliation:
aksood@magnoliaoptical.com, Magnolia Optical Technologies, Inc., 52-B,Cummings Park, Suite 314, Woburn, MA, 01801, United States, 781-503-1200 x105, 781-932-0847
Rajwinder Singh
Affiliation:
rsingh@magnoliaoptical.com, Magnolia Optical Technologies, Inc., United States
Yash R Puri
Affiliation:
yrpuri@magnoliaoptical.com, Magnolia Optical Technologies, Inc., United States
Frederick W Clarke
Affiliation:
fred.clarke@us.army.mil, US Army Space and Missile Defense Command, United States
Amir Dabiran
Affiliation:
dabiran@svta.com, SVT Associates, Inc., United States
Peter Chow
Affiliation:
pchow@svta.com, SVT Associates, Inc., United States
Jie Deng
Affiliation:
jid204@lehigh.edu, Lehigh University, EE Depatment, United States
James C.M. Hwang
Affiliation:
jh00@Lehigh.EDU, Lehigh University, EE Depatment, United States
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Abstract

GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature electronics applications that will replace GaAs and Silicon based devices and amplifiers for commercial and military applications. In this paper, we present GaN/AlGaN based HEMT device architectures on SiC substrates with simulation and modeling results. The HEMT epitaxial layers were grown using RF Plasma Assisted MBE Technique. This approach has demonstrated very uniform epitaxial layers. The key to high performance HEMTs is the ability to grow high quality (Al)GaN buffer layers. Details of the electrical and optical characteristics of the HEMT wafers are presented. In addition, we will present results on an modified (ICP) etching technique that allows for low damage device processing and improved reliability.

Keywords

atomic layer depositionalloyabsorption
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF13-12
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

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