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Detailed Analysis of DLTS Signal of EL2 in LEC n-GaAs Crystals

Published online by Cambridge University Press:  28 February 2011

A. Yahata ,
T. Sato ,
T. Kikjta  and
K. Ishida
A. Yahata
Affiliation:
Optoelectronics Joint Research Laboratory 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Sato
Affiliation:
Optoelectronics Joint Research Laboratory 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
T. Kikjta
Affiliation:
Optoelectronics Joint Research Laboratory 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
K. Ishida
Affiliation:
Optoelectronics Joint Research Laboratory 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

Detailed DLTS measurements have revealed the presence of threedifferent midgap levels, labeled EOI, EO2 and EO3, in LEC n-GaAs. The variations of EOl and EO2 concentrations, which are EL2 and ELO in Lagowski's terminology, do not correlate with the distributions of the optical absorption coefficient across wafers, while that of EO3 exhibits good correlation. This suggests that EO3 is the optically detected midgap level. Furthermore, preliminary charged particle activation analysis of oxygen content in GaAs shows that the presence of EO2 (ELO) is not attributed to oxygen. Concentrations of these levels all increase with arsenic mole fraction in the melt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 179
Copyright
Copyright © Materials Research Society 1985

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