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Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

Published online by Cambridge University Press:  10 February 2011

T. Hattori ,
H. Nohira ,
Y Teramoto  and
N. Watanabe
T. Hattori
Affiliation:
Dept. of Electrical & Electronic Engineering, Musashi Inst. of Technol., 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
H. Nohira
Affiliation:
Dept. of Electrical & Electronic Engineering, Musashi Inst. of Technol., 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
Y Teramoto
Affiliation:
Dept. of Electrical & Electronic Engineering, Musashi Inst. of Technol., 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
N. Watanabe
Affiliation:
Dept. of Electrical & Electronic Engineering, Musashi Inst. of Technol., 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
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Abstract

The interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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References

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