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Detection of Thin Interfacial Layers by Picosecond Ultrasonics

Published online by Cambridge University Press:  25 February 2011

G. Tas ,
R. J. Stoner ,
H. J. Maris ,
G. W. Rubloff ,
G. S. Oehrlein  and
J. M. Halbout
G. Tas
Affiliation:
Department of Physics, Brown University, Providence, RI 02912
R. J. Stoner
Affiliation:
Department of Physics, Brown University, Providence, RI 02912
H. J. Maris
Affiliation:
Department of Physics, Brown University, Providence, RI 02912
G. W. Rubloff
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY10598
G. S. Oehrlein
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY10598
J. M. Halbout
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY10598
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Abstract

We report on experiments in which the picosecond ultrasonics technique is used to detect the existence of thin layers of CFx at the interface between a metal film (Al) and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The thickness of the CFx can be estimated from the rate at which these vibrations are damped out via transmission of sound into the silicon substrate through the CFx layer. We show that thin CFx layers can also be detected via their effect on the rate at which heat flows from the metal to the silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 231
Copyright
Copyright © Materials Research Society 1992

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References

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