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Determination of Diffusion Coefficient of Impurity Ions in a Crystal from their Drift Under Electric Field

Published online by Cambridge University Press:  10 February 2011

A.A. Akopyan ,
V.V. Kislyuk  and
G.S. Pekar
A.A. Akopyan
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252650 Kyiv, Ukraine
V.V. Kislyuk
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252650 Kyiv, Ukraine, Kislyuk@semicond.class.kiev.ua
G.S. Pekar
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 252650 Kyiv, Ukraine
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Abstract

We studied the drift of Cd interstitials in CdS single crystals at an electric field applied to the crystal. These atoms are totally ionized at moderate temperatures of the investigation (300 - 400 K). Mobile Cd ions drift from the anode to the cathode. A time-dependence was studied experimentally for the voltage dropped on the crystal at the constant value of the current passed through the sample. A non-stationary problem developed for the transient process allowed to derive the ion mobility in such a process from the experimental data. Concentration profiles and their time history were investigated in detail for the ions and free carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 548: Symposia EE – Solid State Ionics V , 1998 , 443
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Sheinkman, M.K., Korsunskaya, N.E. in Physics of 11-VI compounds, edited by Georgobiani, A.N., Sheinkman, M.K. (Nauka, Moscow, 1986), p.44. (In Russian).Google Scholar
2. Pronichkin, V.D., Polishchuk, V.E., Ignatov, A.V., Poverkhnost' (Surface), Physics, Chemistry, Mechanics 1, 142, (1987).Google Scholar
3. Juza, R. et al. , Z. Anorg. Allgem. Chemie 285, 61 (1956).Google Scholar
4. Woodbury, H.H., Phys. Rev. 134, A492 (1964).Google Scholar
5. Shaw, D., Watson, E., J. Phys. C 17, 4759 (1984).Google Scholar
6. Zamouche, A., Heiser, T., Mesli, A., Appl.Phys.Lett. 66, 631 (1995).Google Scholar
7. Khandros, L.I., Pekar, G.S., Sheinkman, M.K., Strum, E.L., Phys. Stat. Sol. (a) 33, 765 (1976).Google Scholar
8. Korsunskaya, N.E., Markevich, I.V., Torchinskaya, T.V., Sheinkman, M.K., J.Phys.C 13, 2975 (1980).Google Scholar
9. Kislyuk, V.V., Korsunskaya, N.E., Markevich, I.V., Pekar, G.S., Singarvski, A.F., Sheinkman, M.K., Fiz. Tekh. Poluprovodn. 30, 1884 (1996) [Semiconductors 30, 986 (1996)].Google Scholar
10. Mandel, G., Phys. Rev. 134, A1073 (1964).Google Scholar
11. Korsunskaya, N.E., Markevich, I.V., Torchinskaya, T.V., Sheinkman, M.K., Fiz. Tekh. Poluprovodn. 13, 435 (1979) [Soy. Phys. Semicond. R. 13, 257 (1979)].Google Scholar