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Determination of the Nitrogen Content of as-Implanted and Annealed SIMOX Substrates

Published online by Cambridge University Press:  28 February 2011

J.A. Kilner ,
R.J. Chater ,
S. Biswas ,
P.L.F. Hemment  and
K.J. Reeson
J.A. Kilner
Affiliation:
Department of Materials, Imperial College, London, SW7 2BP, U.K.
R.J. Chater
Affiliation:
Department of Materials, Imperial College, London, SW7 2BP, U.K.
S. Biswas
Affiliation:
Surface Analysis Technology, Technology Transfer Centre, Silwood Park, Ascot, Berkshire, U.K.
P.L.F. Hemment
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.
K.J. Reeson
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.
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Abstract

SIMOX substrate material from two sources, both as-implanted and annealed, have been analysed by Secondary Ion Mass Spectrometry (SIMS) to determine the nitrogen concentration in the silicon overlayer. A variety of different analytical conditions were used on two different SIMS instruments to reduce the possibility of artefacts arising from the difficulties of analysing nitrogen in these materials. The nitrogen contaminant level was found to be consistently below 5 x 1017 nitrogen atoms cm-3, for all the material analysed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 151
Copyright
Copyright © Materials Research Society 1988

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References

1 Davis, G.E. and Prussin, S.. These Proceedings.Google Scholar
2 Eaton Corporation, Oxygen Programme,Beverly, Ma 01915, U.S.A.Google Scholar
3 Benninghoven, A., Sichtermann, W. and Storp, S.. Comparative study of Si(III), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spec-troscopy (SIMS). Thin Solid Films 28 (1975) 59–64.Google Scholar
4 Storms, H.A., Brown, K.F. and Stein, J.D.. Anal. Chem. 49, (1977) 2023.Google Scholar
5 Hockett, R.S., Evans, C.A. and Chu, P.K.. Sixth Int. Conf. on Secondary Ion Mass Spectrometry (SIMS VI) Paris, 13–18 Sept. 1987.Google Scholar