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Determination of the wurtzite content and orientation distribution of nanowire ensembles

Published online by Cambridge University Press:  31 January 2011

Dominik Kriegner
Affiliation:
dominik.kriegner@jku.at, University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Mario Keplinger
Affiliation:
mario.keplinger@jku.at, University Linz, Institute of Semiconductor and Solid State Physics, Linz, Upper Austria, Austria
Julian Stangl
Affiliation:
julian.stangl@jku.at, University Linz, Institute of Semiconductor and Solid State Physics, Linz, Upper Austria, Austria
Aaron M. Andrews
Affiliation:
aaron.maxwell.andrews@tuwien.ac.at, Vienna University of Technology, Institute of Solid State Electronics, Vienna, Austria
Pavel Klang
Affiliation:
klang@fke.tuwien.ac.at, Vienna University of Technology, Institute of Solid State Electronics, Vienna, Austria
Bernhard Mandl
Affiliation:
bernhard.mandl@gmx.de, University Linz, Institute of Semiconductor and Solid State Physics, Linz, Upper Austria, Austria
Thomas Mårtensson
Affiliation:
thomas.martensson@ftf.lth.se, Lund University, Solid State Physics, Lund, Sweden
Magnus Borgstrom
Affiliation:
magnus.borgstrom@ftf.lth.se, Lund University, Solid State Physics, Lund, Sweden
Knut Deppert
Affiliation:
knut.deppert@ftf.lth.se, Lund University, Solid State Physics, Lund, Sweden
Lars Samuelson
Affiliation:
lars.samuelson@ftf.lth.se, Lund University, Solid State Physics, Lund, Sweden
Gottfried Strasser
Affiliation:
gottfried.strasser@tuwien.ac.at, Vienna University of Technology, Institute of Solid State Electronics, Vienna, Austria
Güenther Bauer
Affiliation:
guenther.bauer@jku.at
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Abstract

We present x-ray diffraction based methods to quantitatively determine the wurtzite content of nanowire ensembles and to investigate the effect of twinning. An increased lattice constant in growth direction is found for all investigated InAs and InP nanowire samples. This increase is independent of the wurtzite content. Using x-ray pole figures we find that twinning is present in GaAs/Si branched nanowires, which leads to 60° rotations of the lattice.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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