Published online by Cambridge University Press: 21 February 2011
The spin dynamics of deuteron magnetic resonance (DMR) components have been studied in deuterated plasma-deposited thin films of a-Si, Ge and SiGe. Transient recoveries of perturbed deuteron magnetization components evolve via magnetization transport in the limit of large inhomogeneity. The evolution is well-described by an error function expression whose parameters correlate with the film photovoltaic quality as measured by the photoresponse ημτ and the photosensitivity, ΔI/Id. These relaxation results are correlated with our continuing DMR measurements of reversible metastable photo-induced rearrangements in high-quality a-Si:D,H films. These studies indicate that about 0.5% of the hydrogens interact with a light-induced defect.