Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-10T09:00:33.307Z Has data issue: false hasContentIssue false

Development of Electrodeposited Iridium as a Buffer Layer for YBCO Superconductors

Published online by Cambridge University Press:  01 February 2011

Priscila Spagnol
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Tapas Chaudhuri
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Raghu Bhattacharya
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Sovannary Phok
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Get access

Abstract

Electrodeposition (ED) is a potentially low-cost, non-vacuum, high-rate deposition process that can easily deposit uniform film on large non-planar substrates. In this paper, we report on successful biaxial textured electrodeposition of Ir on Ni-W substrates. Ir metal is well known for its excellent oxidation and corrosion resistance among platinumgroup elements; also, the lattice mismatch of cubic Ir is very close to that of CeO2 and Ni. The films were deposited in a vertical cell in which the electrodes (both working and counter) were suspended vertically from the top of the cell. The ED experiments were performed at 65°C without stirring the solution. The ED precursors were prepared at about -1.2 V from 2 to 15 minutes on Ni-W, where the Pt counter and Pt pseudo-reference electrodes were shorted together. To qualify the electrodeposited Ir buffer layer, a CeO2/YSZ/CeO2 and YSZ/CeO2 buffer structure was later deposited on ED Ir-coated Ni-W substrates by pulsed-laser deposition. The ED Ir/metal substrates were first heated at 800°C in 0.5 mTorr of forming gas, and then a CeO2 seed layer was deposited in 180 mTorr of forming gas. Subsequently, YSZ and CeO2 layers were deposited sequentially in 0.1 mTorr of oxygen.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Goyal, A., Norton, D.P., Budai, J.D., Paranthaman, M., Specht, E.D., Kroeger, D.M., D.K Christen, He, Q., Saffian, B., List, F.A., Lee, D.F., Martin, P.M., Klabunde, C.E., Hartfield, E. and Sikka, V.K., Appl., Phys. Lett. 69 (12), 1795 (1996).Google Scholar
2 Norton, D.P., Goyal, A., Budai, J.D., Christen, D.K., Kroeger, D.M., Specht, E.D., He, Q., Saffian, B., Paranthaman, M., Klabunde, C.E., Lee, D.F., Sales, B.C. and List, F.A., Science 274, 755 (1996).Google Scholar
3 Bhattacharya, R.N., Chen, J., Spagnol, P. and Chaudhuri, T., Electroc. Solid-State Lett. 7 (11), D22 (2004).Google Scholar
4 Bhattacharya, R.N., Chen, J., Spagnol, P., Huang, J.Y. and Ren, Z.F., Supercond., Sci. Tech. 17 (1), 120 (2004).Google Scholar
5 Bhattacharya, R.N., Banerjee, D., Wen, J.G., Padmanabhan, R., Wang, Y.T., Chen, J., Ren, Z.F., Hermann, A.M. and Blaugher, R.D., Supercond., Sci. Tech. 15, 1228 (2002).Google Scholar
6 Bhattacharya, R.N. and Paranthaman, M., Physica C 251, 105 (1995).Google Scholar
7 Goyal, A., Paranthaman, M.P., and Schoop, U., MRS Bulletin 29 (8), 552 (2004).Google Scholar
8 Aytug, T., Paranthaman, M., Zhai, H.Y., Gapud, A.A., Leonard, K.J., Martin, P.M., Goyal, A., Thompson, J.R. and Christen, D.K., Appl. Phys. Lett. 85 (14), 2887 (2004).Google Scholar