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Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

Published online by Cambridge University Press:  09 May 2013

Edward Yi Chang ,
Hai-Dang Trinh ,
Yueh-Chin Lin ,
Hiroshi Iwai  and
Yen-Ku Lin
Edward Yi Chang*
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Taiwan. Department of Electronic Engineering, National Chiao Tung University, Taiwan.
Hai-Dang Trinh
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Taiwan.
Yueh-Chin Lin
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Taiwan.
Hiroshi Iwai
Affiliation:
Frontier Research Center, Tokyo Institute of Technology, Tokyo, Japan
Yen-Ku Lin
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Taiwan.
*
*)Email: edc@mail.nctu.edu.
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Abstract

III-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Keywords

dielectricIII-Vdiffusion
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 291 - 302
Copyright
Copyright © Materials Research Society 2013 

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