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‘Device Quality’ Silicon Dioxide Layers by Low Temperature PECVD Processes

Published online by Cambridge University Press:  21 February 2011

J. Haase ,
R. Ferretti  and
J. Pille
J. Haase
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik, Appelstr.11A, D-3000 Hannover 1, West-Germany.
R. Ferretti
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik, Appelstr.11A, D-3000 Hannover 1, West-Germany.
J. Pille
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik, Appelstr.11A, D-3000 Hannover 1, West-Germany.
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Abstract

PECVD oxides are promising as low-temperature gate insulator for MOS devices. For the evaluation of their quality, PECVD oxides of 10nm–35nm are deposited by using different RF power frequencies (100KHz, 450KHz or 13.56MHz), a low plasma energy density (0.04W/cm2) and a mixture of He, N2O, SiH4 gases. The deposition is followed by a set of RTP anneals at different temperatures. After aluminium metallization and gate definition, C(V)- and FN-characteristics are measured. Interface trap densities, oxide charge densities, breakdown fields and breakdown charges are determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 241
Copyright
Copyright © Materials Research Society 1991

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References

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