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Dielectric and Ferroelectric Properties of Modified BiFeO3-PbTiO3 Thin Films Derived from Sol-gel Processing

Published online by Cambridge University Press:  01 February 2011

JinRong Cheng  and
L. Eric Cross
JinRong Cheng
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 School of Materials Science and Engineering, Shanghai University, Shanghai 201800, P.R. China
L. Eric Cross
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, PA 16802
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Abstract

In this paper, thin films of La- modified (Bi,La)FeO3-PbTiO3 (BLF-PT) morphotropic phase boundary (MPB) solid solutions have been prepared by using sol-gel processing. A thin Pb(Zr,Ti)O3 (PZT) template layer was introduced to make BLF-PT thin films adhere tightly to the platinized silicon (Pt/Ti/SiO2/Si) substrate. X-ray diffraction (XRD) analysis revealed that BLF-PT thin films were of the perovskite structure without detectable pyrochlore phase annealing at 650–750°C. The cross sectional and plain view images of or our specimen were observed by using the scan electrical microscope (SEM). The room temperature dielectric constant K and tanδ were of ∼800 and 4% respectively, for BLF-PT thin films using a measurement frequency of 1 kHz. Our preliminary experiments indicated that the sol-gel derived BLF-PT thin films have good insulation resistance and measurable dielectric and ferroelectric responses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C8.16
Copyright
Copyright © Materials Research Society 2004

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References

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