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Dielectric and Transverse Piezoelectric Characterization of Sol-Gel Derived Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) FILMS WITH {100} and {111} Textures

Published online by Cambridge University Press:  10 February 2011

Jeong Hwan Park  and
Susan Trolier-McKinstry
Jeong Hwan Park
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Susan Trolier-McKinstry
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Highly {100} and {111} oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) films were deposited on Pt(111)-passivated silicon substrates using a modified sol-gel process. In both cases, the degree of preferred orientation did not change with film thickness from 0.56 μm to 1.5 μm. The room temperature dielectric constants for the {100}-oriented films were 2100–2650, while those for the {111} oriented films were 1900–2350. In both cases tan δ was less than 0.03. It was found that the piezoelectric coefficient (d31) of the PMN-PT films increased with increasing film thickness. The d31 coefficient of highly {100} oriented PMN-PT films poled for 5 minutes at 85 kV/cm were found to range from –45 to –86 pC/N assuming a Young's modulus of 35 GPa. Highly {100} oriented PMN-PT films showed larger piezoelectric coefficients than {111} oriented films. Results on aging of the piezoelectric coefficients for the differently oriented films are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 511
Copyright
Copyright © Materials Research Society 2000

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