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Diffusion of Au in Amorphous Si Measured by the Artificial Multilayer Technique

Published online by Cambridge University Press:  25 February 2011

E. Nygren ,
B. Park ,
L.M. Goldman ,
D.T. Wu ,
A.V. Wagner  and
F. Spaepen
L.M. Goldman
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D.T. Wu
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
A.V. Wagner
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

The diffusivity of Au in amorphous Si (a-Si) has been determined in the temperature range 200-260°C using and Ar-ion sputter deposited artificial multilayered films of a-Si and a-Si(0.7at%Au) with repeat lengths between 44 and 48 Å. Diffusion on lengths scales of the order of interatomic spacings have been investigated. The Au diffusivity exhibits an Arrhenius temperature dependence with an activation enthalpy of 1.2eV and shows good agreement with extrapolations of higher temperature Au diffusion data obtained by Rutherford backscattering spectrometry (RBS) in ion-implanted, CVD, and sputter deposited a-Si. The measured Au diffusivity also shows a significant time dependence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 627
Copyright
Copyright © Materials Research Society 1990

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