Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-29T23:55:24.214Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion Processes and Pre-Exponential Factors in Homo-Epitaxial Growth on Ag(100)

Published online by Cambridge University Press:  10 February 2011

Ulrike Kürpick  and
Talat S. Rahman
Ulrike Kürpick
Affiliation:
Department of Physics, Cardwell Hall, Kansas State University, Manhattan, Kansas 66506, USA
Talat S. Rahman
Affiliation:
Department of Physics, Cardwell Hall, Kansas State University, Manhattan, Kansas 66506, USA
Get access

Abstract

We provide a recipe for the evaluation of pre–factors for various diffusion processes relevant to crystal growth on Ag(100), based on explicit calculations of appropriate vibrational density of states using realistic many-body interaction potentials. Our calculated diffusion coefficients show that while hopping processes are favored for terrace self-diffusion, exchange processes dominate step-edge diffusion. We also find the characteristics of adatom diffusion along the < 100 >-step-edge to be strikingly different from the < 110 >-step-edge with interesting consequences for interlayer transport on this surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 263
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Foiles, S. M., Baskes, M. I., and Daw, M. S., Phys. Rev. B 33, 7983 (1986).Google Scholar
[2] Voter, A. F. and Chen, S. P., Proc. Mat. Res. Soc. 82, 175 (1986),Google Scholar
Voter, A. F., SPIE, Modeling of Optical Thin Films 821, 214 (1987).Google Scholar
[3]For a review about the embedded atom method and its applications see: Daw, M. S., Foiles, S. M. and Baskes, M. I., Mat. Sci. Rep. 9, 251 (1993).Google Scholar
[4] Yu, B. D. and Schemer, M., Phys. Rev. Lett. 77, 1095 (1996).Google Scholar
[5]For a comparison between activation barriers calculated with the EAM potential and from first principles see: Kürpick, U. and Rahman, T. S., Surface Diffusion: Atomistic and Collective Processes, NATO-ASI Series, in press.Google Scholar
[6] Kürpick, U., Kara, A., and Rahman, T. S., Phys. Rev. Lett. 78, 1086 (1997).Google Scholar
[7] Kürpick, U. and Rahman, T. S., Surf. Sci. 383, 137 (1997).Google Scholar
[8] Kürpick, U. and Rahman, T. S., Phys. Rev. B, in press.Google Scholar
[9] Vineyard, G. H., J. Phys. Chem. Solids 3, 121 (1957).Google Scholar