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Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous Si

Published online by Cambridge University Press:  28 February 2011

D. C. Jacobson ,
R. G. Elliman ,
J. M. Gibson ,
G. L. Olson ,
J. M. Poate  and
J. S. Williams
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. G. Elliman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. S. Williams
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150–600° C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515°C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 327
Copyright
Copyright © Materials Research Society 1987

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References

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