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A diminished thermal conductivity of Si/SiGe multilayers established through heating current frequency variation

Published online by Cambridge University Press:  31 January 2011

Alex Dooraghi
Affiliation:
alexdooraghi@yahoo.com, UC, San Diego, La Jolla, California, United States
Prabhakar Bandaru
Affiliation:
pbandaru@ucsd.edu, UC, San Diego, 258, EBU 2, 9500 Gilman Drive, La Jolla, California, 92093, United States, (858) 534-5325
Dan Krommenhoek
Affiliation:
d.krommenhoek@hi-z.com, Hi-Z Technology Inc., San Diego, California, United States
Norbert Elsner
Affiliation:
n.elsner@hi-z.com, Hi-Z Technology Inc., San Diego, California, United States
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Abstract

We report on the measurement of the thermal conductivity of Si/Si0.8Ge0.2 multilayers on Si substrates through a variation of the 3? method. We exploit the frequency dependent variation of the thermal wave, through invoking the thermal penetration depth (TPD), which is inversely proportional to the frequency. Consequently, spectral measurements covering decades of frequency were used to finely probe the substrate and the overlying Si and Si0.8Ge0.2 thin film layers. Both in-phase and out-of phase measurements yielded comparable values of the thermal conductivity in the range of 3-5 W/mK, much lower than the reported bulk values. Our results provide proof of the potential of multilayered media to be used for reduced thermal conductance applications such as thermoelectrics, heat insulation etc.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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