Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-28T10:11:47.545Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Electron Beam Processing Of Semiconductor Nanostructures

Published online by Cambridge University Press:  01 February 2011

Yeonjoon Park ,
Rian Zhao ,
Petra Specht  and
Eicke R. Weber
Yeonjoon Park
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Rian Zhao
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Petra Specht
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Eicke R. Weber
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Get access

Abstract

We used a high current density focused electron beam to modify a GaAs substrate. To avoid any oxidation or carbon contamination problem, an in-situ electron gun, combined with III-V molecular beam epitaxy (MBE) machine, was used. By changing the substrate temperature and the electron beam dwell time on each spot, different sizes of thermal irradiation marks were created. Fabricated spot-diameters in the sub-micrometer range suggest the possible utilization of this process for novel applications with the MBE growth technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R11.11
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ito, Y., Bleloch, A.L., Patterson, J.H., and Brown, L.M., Ultramicrosc. 52, 347 (1993).Google Scholar
2 Chen, G.S., Boothroyd, C.B., and Humphreys, C.J., Appl. Phys. Lett. 62, 1949 (1993).Google Scholar
3 Libera, M., Appl. Phys. Lett. 68, 15 (1996).Google Scholar
4 Sheng, H.Y., Fujita, D., Ohgi, T. and Nejoh, H., J. Phys. D: Appl. Phys. 31, 3206 (1998).Google Scholar
5 Ishkawa, T., Nishmura, T., Komoto, S., and Asakawa, K., Appl. Phys. Lett. 76, 167 (2000).Google Scholar
6 Iranmanesch, A.A., Pease, R.F.W., J. Vac. Sci. Technol. B 1(1), 91 (1983); J. Vac. Sci. Technol. A 1(2), 739 (1983)Google Scholar
7 Greeneich, J.S., Ph.D. Thesis, University of California at Berkeley, 1973 Google Scholar
8 Akbulut, M., Sack, N.J., Madey, T.E., Surf. Sci. 351, 209 (1996).Google Scholar
9 Robertson, I.M., Jenèiè, I., J. of Nucl. Mat. 239, 273 (1996).Google Scholar