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Direct Holographic Processing Using Laser Chemistry

Published online by Cambridge University Press:  21 February 2011

H. H. Gilgen ,
D. Podlesnik ,
C. J. Chen  and
R. M. Osgood Jr
H. H. Gilgen
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
D. Podlesnik
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
C. J. Chen
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
R. M. Osgood Jr
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
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Abstract

By using two interfering laser beams to initiate localized chemical reactions at an interface, very high resolution, maskless microfabrication can be done over relatively large substrate areas. The resulting deposited or etched patterns can be used in a variety of electrooptical and electronic applications. In addition, this type of fabrication, which can be monitored in real time, provides insight into many new interfacial phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 139
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1 Osgood, R.M., Brueck, S.R.J., and Schlossberg, H.R., Laser Diagnostics and Photochemical Processing for Semiconductor Devices (North Holland, Amsterdam, 1983).Google Scholar
2 Osgood, R. M., Sanchez-Rubio, A., Ehrlich, D.J., and Daneu, V., Appl. Phys Lett., 40, 391 (1982).Google Scholar
3 Podlesnik, D., Gilgen, H.H., Osgood, R.M., and Sanchez, A., Appl. Phys. Lett. (in press).Google Scholar
4 Kuhn-Kuhnenfeld, F., J. Electrochem. Soc., 119, 1063 (1972).Google Scholar
5 Belyakov, L.V., Goryachev, D.N., Paritskii, L.G., Ryvkin, S.M., and Sreseli, O.M., Sov. Phys. Semicond., 10, 678 (1976).Google Scholar
6 Casey, H.C. Jr., Miller, B.I., and Pinkas, E., J. Appl. Phys. 44, 1281.Google Scholar
7 Osgood, R. M. and Ehrlich, D.J., Opt. Lett. 7, 385 (1982);CrossRefGoogle Scholar
7a Brueck, R.J. and Ehrlich, D.J., Phys. Rev. Lett., 48, 1678 (1982).Google Scholar
8 Gilgen, H.H., Chen, J. C., Osgood, R.M., (unpublished).Google Scholar