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A Direct Method of Determining Complex Depth Profiles of Residual Stresses in Thin Films on a Nanoscale - Mechanics of Residually Stressed Systems

Published online by Cambridge University Press:  01 February 2011

Stefan Massl ,
Jozef Keckes  and
Reinhard Pippan
Stefan Massl
Affiliation:
stefan.massl@mu-leoben.at, Austrian Academy of Sciences, Erich Schmid Institute, Jahnstr. 12, Leoben, A-8700, Austria, +43 3842 804 214, +43 3842 804 116
Jozef Keckes
Affiliation:
keckes@unileoben.ac.at, University of Leoben, Department Materials Physics, Jahnstr. 12, Leoben, A-8700, Austria
Reinhard Pippan
Affiliation:
pippan@unileoben.ac.at, Austrian Academy of Sciences, Erich Schmid Institute, Jahnstr. 12, Leoben, A-8700, Austria
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Abstract

The basic ideas behind the calculation procedure of the developed ion beam layer removal method (ILR method) to determine complex depth profiles of residual stresses are explained. In order to give the readers an understanding of the mechanics of films on substrates and the corresponding stresses in cantilevers fabricated from such systems, the equations necessary for the calculations are explained by means of a residually stressed model system.

Keywords

thin filmion-beam processingcoating
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD03-06
Copyright
Copyright © Materials Research Society 2008

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References

1 Massl, S., Keckes, J. and Pippan, R., Acta Mater. 55, 4835 (2007).Google Scholar
2 Gere, J.M., Mechanics of Materials, 6th ed. (Brooks/Cole, Belmont, 2004) pp.300.Google Scholar