Hostname: page-component-6bf8c574d5-2jptb Total loading time: 0 Render date: 2025-02-22T15:58:15.524Z Has data issue: false hasContentIssue false
  • English
  • Français

Directional Solidification and Characterization of Hg1−xCdxTe Alloys*

Published online by Cambridge University Press:  15 February 2011

S. L. Lehoczky  and
F. R. Szofran
S. L. Lehoczky
Affiliation:
McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation St. Louis, Missouri 63166 USA
F. R. Szofran
Affiliation:
McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation St. Louis, Missouri 63166 USA
Get access

Abstract

A series of Hg1−xCdxTe alloy crystals was grown by high-temperature-gradient directional solidification at furnace translation rates ranging from 0.068 to 1.12 μm/s. For several ingots, the measured longitudinal compositional profiles were fitted to theoretical profiles to estimate the magnitude of D, the liquid HgTe-CdTe interdiffusion coefficient. The best-fit value of D was about 5.5 × 105 cm2/s. The majority of the ingots showed significant radial compositional variations along the growth axis. These variations are attributed, at least in part, to fluid flows ahead of the growth interface. The results are discussed in terms of the heat transfer characteristics of the alloy/ampule/ furnace system and the effects of these characteristics on the shape and stability of the growth interface in a 1-g environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 9 , 1981 , 409
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Blair, J. and Newnham, R., Metallurgy of Elemental and Compound Semiconductors, (Interscience Publishers, New York, 1961), Vol. 12, p. 393.Google Scholar
2.Harman, T. C., in Physics and Chemistry of II-VI Compounds, Aven, M. and Prener, J. S., Eds., (North Holland Publishing Co. Amsterdam, 1967), p. 785.Google Scholar
3.Ray, B. and Spencer, P. M., Phys. Stat. Sol. 22, 371 (1967).Google Scholar
4.Szofran, F. R. and Lehoczky, S. L., J. Electronic Mater. (in press).Google Scholar
5.Brebrick, R. F. and Strauss, A. J., J. Phys. Chem. Solids 26, 989 (1965).Google Scholar
6.Brau, Maurice J., U. S. Patent No. 3 849 205 (1974).Google Scholar
7.Bartlett, B. E., Capper, P., Harris, J. E. and Quelch, M. J. T., J. Crystal Growth 46, 623 (1979).Google Scholar
8.Smith, V. G., Tiller, W. A. and Rutter, J. W., Can. J. Phys. 33, 723 (1953).Google Scholar
9.Lehoczky, S. L., Szofran, F. R. and Martin, B. G., “Advanced Methods for Preparation and Characterization of Infrared Detector Materials,” McDonnell Douglas Report MDC Q0717, NASA Contract NAS8-33107 (July 1980).Google Scholar
10.Woolley, J. C. and Ray, B., J. Phys. Chem. Solids 13, 151 (1960).Google Scholar
11.Bowman, H. A., Schooner, R. M. and Jones, M. W., J. Res. Natl. Bur. Std. (U. S.) 71C, 179 (1967).Google Scholar
12.Clayton, J. C., Davidson, M. and Gillies, D. C., private communications.Google Scholar
13.Davidson, M., Clayton, J. C. and Gillies, D. C., private communications.Google Scholar
14.Chang, C. E. and Wilcox, W. R., J. Crystal Growth 21, 135 (1974).Google Scholar