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Directly Bonded Copper Metallization of AℓN Substrates for Power Hybrids

Published online by Cambridge University Press:  22 February 2011

Petra Kluge-Weiss  and
Jens Gobrecht
Petra Kluge-Weiss
Affiliation:
Brown Boveri Research Center CH-5405 Baden, Switzerland
Jens Gobrecht
Affiliation:
Brown Boveri Research Center CH-5405 Baden, Switzerland
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Abstract

Aluminum nitride (AℓN) ceramic is emerging as an attractive substrate material for high performance heat sinking in hybrid circuits be -cause of its high thermal conductivity. We report on the application of the direct bonding technique for Cu on AℓN substrates. For successful bonds, the surface of the AℓN has to be oxidized. Oxidation rates are reported and the oxide morphology is analyzed. The peel strength of the Cu sheet depends on oxide thickness, growth method and Cu-type used. Under optimum conditions the peel strength exceeds 50 N/cm. A detailed analysis using optical microscopy as well as SEM, STEM, EDX, and electron diffraction techniques of the AℓN/Aℓ2O3/Cu interface is carried out.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 40: Symposium J – Electronic Packaging Materials Science I , 1984 , 399
Copyright
Copyright © Materials Research Society 1985

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