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Published online by Cambridge University Press: 11 February 2011
Conjugated polymer Schottky diodes have been directly written onto glass and alumina substrates. The rectifying contact was made between the p-type semiconductor poly(3,4-ethylene-dioxythiophene) doped with polystyrene sulfonic acid and Zn. The devices exhibit rectification ratios in the range of 102:1 to 103:1 at biases of ±1 V and ±10 V, respectively. The devices demonstrate rectification at frequencies up to 250 kHz. A full-wave bridge rectifier circuit written onto a glass substrate converts ac to dc up to 250 kHz and ±5 V.