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A Discussion of Electronic Optical Absorption Spectra of Nanocrystalline Silicon thin Films

Published online by Cambridge University Press:  21 February 2011

Etienne Bustarret  and
M.A. Hachicha
Etienne Bustarret
Affiliation:
Max-Planck-Institute für Festkörperforschung, D-7000 Stuttgart 80, FRG
M.A. Hachicha
Affiliation:
Lab. Etudes de Propriétés Electroniques des Solides, CNRS, BP 166x, F-38042, Grenoble, France, (associated to Univ. J. Fourier de Grenoble)
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Abstract

Both fully crystallized nanocrystalline as-deposited silicon layers with an average grain size ranging between 6 and 80 nm and mixed-phase hydrogenated doped and undoped silicon films are studied at room temperature by Photothermal Deflection Spectroscopy (PDS), Transmission Spectroscopy and Spectroscopic Ellipsometry. The differences with regard to similar data obtained on monocrystalline and hydrogenated amorphous silicon are discussed, with an emphasis on the low-energy part of the 0.6-5.6 eV explored range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 211
Copyright
Copyright © Materials Research Society 1990

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