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Dislocation Formation in Trench-Based Dynamic Random Access Memory (DRAM) Chips

Published online by Cambridge University Press:  15 February 2011

H. Ho ,
E. Hammerl ,
R. Stengl  and
J. Benedict
H. Ho
Affiliation:
IBM East Fishkill, Advanced Semiconductor Research and Development Center
E. Hammerl
Affiliation:
Siemens at IBM East Fishkill, Advanced Semiconductor Research and Development Center
R. Stengl
Affiliation:
Siemens at IBM East Fishkill, Advanced Semiconductor Research and Development Center
J. Benedict
Affiliation:
IBM East Fishkill, Advanced Semiconductor Research and Development Center
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Abstract

This paper reports on our studies of dislocation formation in trench capacitor DRAM structures. Experimental results on process dependence and layout dependence of dislocation formation in cell layouts with minimum feature sizes from 0.5 μm to 0.25 μm are compared to two-dimensional stress simulations. It is shown that the nucleation and spatial distribution of dislocations can be explained by considering stress fields which are influenced by the overlay of deep trench and shallow trench isolation structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 459
Copyright
Copyright © Materials Research Society 1996

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References

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