Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-10T08:34:23.955Z Has data issue: false hasContentIssue false

Dislocation Pattern Formation – Simulations of Annealing in Two Dimensions

Published online by Cambridge University Press:  14 March 2011

Nathan Argaman
Affiliation:
Physics Department, N.R.C.N., P.O. Box 9001, Beer Sheva 84190, Israel
Ohad Levy
Affiliation:
Physics Department, N.R.C.N., P.O. Box 9001, Beer Sheva 84190, Israel
Guy Makov
Affiliation:
Physics Department, N.R.C.N., P.O. Box 9001, Beer Sheva 84190, Israel
Get access

Abstract

A two-dimensional discrete dislocation dynamics code was developed and used to simulate dislocation patterning. For the present study of annealing, both glide and some climb were allowed in the simulations. In these circumstances patterning takes place even in the absence of external stresses and of dislocation sources. A triangular underlying lattice was assumed, with the three slip systems equally populated initially. Well-defined dislocation walls and cells are observed to form from random initial conditions. The structure coarsens with time, i.e. the typical size of the cells increases as annealing takes place (the smaller cells shrink and disappear from the structure). In the spirit of a bottom-up multiscale approach, it is suggested that a new simulation methodology should be developed, in which the discrete moving objects will be dislocation wall segments rather than individual dislocations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Campbell, G.H. et al. , Mat. Sci. Eng. A 251, 1 (1998).Google Scholar
2. See, for example, Amodeo, R.J. and Ghoniem, N.M., Phys. Rev. B 41, 6958 (1990); 41, 6968 (1990); R.M. Zbib, M. Rhee, and J. Hirth, Int. J. Mech. Sci. 40, 113 (1998); D. Raabe, Z. Metallkd. 87, 493 (1996); M. Tang, L.P. Kubin, and G.R. Canova, Acta Mater. 46, 3221 (1998).Google Scholar
3. Cai, W., Bulatov, V.V., Justo, J.F., Argon, A.S., and Yip, S., Phys. Rev. Lett. 84, 3346 (2000).Google Scholar
4. Barts, D.B. and Carlson, A.E., Phil. Mag. A 75, 541 (1997).Google Scholar
5. Argaman, N., Levy, O., and Makov, G., Mat. Sci. Eng. A 309–310, 386 (2001).Google Scholar
6. Argaman, N., Levy, O., and Makov, G., J. Phys. IV (France) (in press).Google Scholar
7. Fournet, R. and Salazar, M., Phys. Rev. B 53, 6283 (1996).Google Scholar