Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-30T23:23:05.368Z Has data issue: false hasContentIssue false
  • English
  • Français

Dispersion Number Studies in ChemicalMechanical Planarization

Published online by Cambridge University Press:  01 February 2011

Ara Philipossian  and
Erin Mitchell
Ara Philipossian
Affiliation:
Department of Chemical and Environmental EngineeringThe University of ArizonaTucson, AZ 85721 USA
Erin Mitchell
Affiliation:
Department of Chemical and Environmental EngineeringThe University of ArizonaTucson, AZ 85721 USA
Get access

Abstract

This study explores aspects of the fluid dynamics of CMP processes. The residence time distribution of slurry under the wafer is experimentally determined and used to calculate the Dispersion Number (Δ) of the fluid in the wafer-pad region based on a dispersion model for non-ideal reactors. Furthermore, lubrication theory is used to explain flow behaviors at various operating conditions. Results indicate that at low wafer pressure and high relative pad-wafer velocity, the slurry exhibits nearly ideal plug flow behavior. As pressure increases and velocity decreases, flow begins to deviate from ideality and the slurry becomes increasingly more mixed beneath the wafer. These phenomena are confirmed to be the result of variable slurry film thicknesses between the pad and the wafer, as measured by changes in the coefficient of friction (COF) in the pad-wafer interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F5.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. The International technology Roadmap for Semiconductors 2002 edition. Technical report, Semiconductor Industry Association (SIA), San Jose, CA, 2002.Google Scholar
2. Stein, D. Hetherington, D. Dugger, M. and Stout, T. Journal of Electronic Materials, 25,1623 (1996).Google Scholar
3. Kim, K. Moon, S. and Jeong, H. PV99-37, p402–407, ECS Proceedings Series, 1999.Google Scholar
4. Sikder, A. Giglio, F. Wood, J. Kumar, A. and Anthony, M. J. Elec. Mat., 30 1520 (2001).Google Scholar
5. Philipossian, A. and Mitchell, E. Micro, 20 No7, 85 (2002).Google Scholar
6. Levenspiel, O. Chemical Reaction Engineering. John Wiley & Sons, Inc., NewYork (1972).Google Scholar
7. Froment, G. and Bischoff, K. Chemical Reactor Analysis and Design. John Wiley & Sons, Inc., New York (1979).Google Scholar
8. Lu, J. M.S. Thesis, Tufts University, MA. USA (2001).Google Scholar
9. Olsen, S. M.S. Thesis, University of Arizona, AZ, USA (2002).Google Scholar