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Distant Pair Interactions Involving Antisites in GaAs

Published online by Cambridge University Press:  28 February 2011

B.C. Cavenett  and
M. Deiri
B.C. Cavenett
Affiliation:
Department of Physics, University of Hull, U.K.
M. Deiri
Affiliation:
Department of Physics, University of Hull, U.K.
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Abstract

An investigation of the photoquenching behaviour in semi-insulating GaAs at low temperature shows that the ASGa antisite MCD-ODMR is persistently quenched while a broad vacancy-like resonance near g=2, which shows a variation of g-factor with absorption energy, broadens and becomes energy independent. The results are discussed in terms of interacting antisite and vacancy centres in analogy with the distant pair model for donor-acceptor pair recombination and the advantages of the triplet model for the EL2 metastahle state are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 195
Copyright
Copyright © Materials Research Society 1985

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References

1. Lang, D.V. and Logan, R.A., Phys. Rev. Letters, 39 635 (1977).CrossRefGoogle Scholar
2. Craven, R.A. and Finn, D., J. Appl. Phys., 50 6334 (1979).CrossRefGoogle Scholar
3. Levinson, M., Benton, J.L. and Kimerling, L.C., Phys. Rev. B27 6216 (1983).CrossRefGoogle Scholar
4. Martin, G.M., App. Phys. Lett., 39 747 (1981).CrossRefGoogle Scholar
5. Webster, E.R., Enren, H., Kaufmann, V., Windscheif, J. and Schneider, J., J. Appl. Phys. 53 6140 (1982).Google Scholar
6. Vincent, G., Bois, D. and Chantre, A., J. Appl. Phys. 53 3643 (1982).CrossRefGoogle Scholar
7. Lagowski, J., Lin, D.G., Gatos, H.C., Parsey, J.M., Wada, K., Kaminska, M. and Walukiewicz, W., Appl. Phys. Letters 45 89 (1984).CrossRefGoogle Scholar
8. Levinson, M., Phys. Rev. B28 3660 (1983).CrossRefGoogle Scholar
9. Deiri, M., Hcmewood, K.P. and Cavenett, B.C., J. Phys. C, 17 L627 (1984).CrossRefGoogle Scholar
10. Meyer, B.K., Spaeth, J-M. and Scheffler, M., Phys. Rev. B52 851 (1984).Google Scholar
11. Meyer, B.K. and Spaeth, J-M., J. Phys. C. 18 L99 (1985).CrossRefGoogle Scholar
12. Hofmann, D.M., Meyer, B.K., Lohse, F. and Spaeth, J-M., Phys. Rev. Letters 53 1187 (1984).CrossRefGoogle Scholar
13. Cavenett, B.C., J. Lu.mo 31/32 369 (1984).CrossRefGoogle Scholar
14. Taniguchi, M. and Ikcma, T., Appl. Phys. Letters 45 69 (1984).CrossRefGoogle Scholar