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Does ion Bombardment Induce a Degradation of the Electronic Properties of a-Si:H Films?

Published online by Cambridge University Press:  25 February 2011

P. Roca i Cabarrocas ,
P. Morin ,
J. Conde ,
V. Chu ,
J.Z. Liu ,
H.R. Park  and
S. Wagner
P. Roca i Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR A 0258 du CNRS), Ecole Polytechnique F-91128 Palaiseau Cedex, France
P. Morin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. Conde
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10589
V. Chu
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR A 0258 du CNRS), Ecole Polytechnique F-91128 Palaiseau Cedex, France
J.Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
H.R. Park
Affiliation:
Department of Physics, Mokpo National University, Muan, Chonnam, Korea
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We present a detailed study of the effects of a negative bias applied to the substrate on the electronic properties of a-Si:H films deposited by r.f. glow discharge. Two series of samples deposited at 30 and 100 mTorr respectively have been studied. For each series the negative d.c. bias applied to the substrate was decreased from 0 to −100 V in steps of 25 V. We observe for both series of samples an improvement of the electronic properties of the films as we decrease the substrate bias (increase the ion energy) down to − 50 V. We have found a clear correlation between the negative bias applied to the substrate and the subgap absorption, the valence band tail slope and the electron and hole μτ products.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 745
Copyright
Copyright © Materials Research Society 1990

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References

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