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Dopant - Extended Defects Interactions: The Case of Aluminum

Published online by Cambridge University Press:  17 March 2011

Ch. Ortiz ,
D. Mathiot ,
Ch. Dubois ,
D. Alquier  and
R. Jérisian
Ch. Ortiz
Affiliation:
L.M.P., 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France) Laboratoire PHASE-CNRS, 23 rue du Loess, 67037 Strasbourg Cedex 2 (France)
D. Mathiot
Affiliation:
Laboratoire PHASE-CNRS, 23 rue du Loess, 67037 Strasbourg Cedex 2 (France)
Ch. Dubois
Affiliation:
L.P.M./Insa Lyon, 20 rue Albert. Einstein, 69621 Villeurbanne Cedex (France)
D. Alquier
Affiliation:
L.M.P., 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France)
R. Jérisian
Affiliation:
L.M.P., 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France)
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Abstract

We studied the Al redistribution in the vicinity of a well-defined EOR band formed by Ge pre-amorphization. Aluminum was implanted in Si at 3 MeV to a low dose before the preamorphization step in order to localize the as-implanted Al peak away from the EOR band. Rapid thermal annealings were performed in the temperature range [900-1000°C] for times varying from 20 s up to 200 s. The results of this study evidence a clear accumulation of the dopant on the extended defects, indicating a direct trapping mechanism of the dopant by the EOR.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.4
Copyright
Copyright © Materials Research Society 2000

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References

[1] Galvagno, G., Via, F. La, Priolo, F. and Rimini, E., Semicond. Sci. Technol. 8 (1993) 488–494 10.1088/0268-1242/8/4/002Google Scholar
[2] Galvagno, G., Scandurra, A., Raineri, V., Spinella, C., Torrisi, A., Ferla, A. La, Sciascia, V. and Rimini, E., J. Electrochem. Soc., 140, 2313 (1993)10.1149/1.2220815Google Scholar
[3] Ferla, A. La, Torrisi, L., Galvagno, G. and Rimini, E., Appl. Phys. Lett. 62(4), 393 (1993)10.1063/1.108967Google Scholar
[4] Ortiz, Ch., Grob, J.J., Mathiot, D., Claverie, A., Dubois, Ch. and Jérisian, R., NIM B 147 (1999) 122–126 10.1016/S0168-583X(98)00575-8Google Scholar
[5] Bonafos, C., Claverie, A., Alquier, D., Bergaud, C., Martinez, A., Laânab, L., and Mathiot, D. Appl. Phys. Lett. 71 (3), 365 (1997)10.1063/1.119563Google Scholar
[6] Mannino, G., Cowern, N.E.B., Roozeboom, F., and Berkaum, J.G.M. van, Appl. Phys. Lett. 76, 855 (2000)10.1063/1.125607Google Scholar
[7] Stolk, P.A., Eagleham, D.J., Gossman, H.J., and Poate, J.M., Appl. Phys. Lett. 66, 1370 (1995)10.1063/1.113204Google Scholar
[8] Bonafos, C., Mathiot, D., and Claverie, A., J. Appl. Phys. 83, 3008 (1998)10.1063/1.367056Google Scholar
[9] Bergaud, C., Mathiot, D., Lâanab, L., Claverie, A. and Martinez, A., Proceedings of IIT 94 Catania (1994) 756 Google Scholar
[10] Pichler, P., Jungling, W., Selberherr, S., Guerrero, E. and Pötzl, H.W., IEEE Trans. Computer-Aided Design 4, 384 (1985)10.1109/TCAD.1985.1270136Google Scholar
[11] Alquier, D., Thesis, Toulouse (1998)Google Scholar
[12] Ortiz, Ch., Mathiot, D., Dubois, Ch., and Jérisian, R. J. Appl. Phys. 87 (5), 2661 (2000)10.1063/1.372236Google Scholar