Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-15T07:12:09.664Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping in III-V Semiconductors

Published online by Cambridge University Press:  22 February 2011

E. F. Schubert
E. F. Schubert*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

Doping of III-V semiconductors is an essential part of growth and processing technology for optoelectronic and high speed electronic devices. This review covers several recent developments in III-V doping including (i) the high-concentration regime for p-type dopants in InP and GaAs, (ii) the sensitivity of doping incorporation on the crystal orientation, (iii) compensation mechanisms in Si-doped GaAs, and (iv) p-type carbon doping in GaAs and AlxGa1-xAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 273
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schubert, E. F. Doping in III-V Semiconductors (Cambridge University Press, Cambridge, 1993).Google Scholar
[2] Schubert, E. F., Kuo, J. M., Kopf, R. F., Luftman, H. S., Hopkins, L. C., and Sauer, N. J., J. Appl. Phys. 67, 1969 (1990).Google Scholar
[3] Ritter, D., Hamm, R. A., Panish, M. B., and Geva, M., Appl. Phys. Lett. 63, 1548 (1993).Google Scholar
[4] Logan, R. A. and Chu, S. N. G., unpublished results (1994).Google Scholar
[5] Kopf, R. F., Schubert, E. F., Downey, S. W., and Emerson, A. B., Appl. Phys. Lett. 61, 1820 (1992).Google Scholar
[6] Schubert, E. F., Gilmer, G. H., Kopf, R. F., and Luftman, H. S., Phys. Rev. B46, 15078 (1992).Google Scholar
[7] Pfeiffer, L., West, K. W., Stormer, H. L., Eisenstein, J. P., Baldwin, K. W., Gershoni, D., and Spector, J., Appl. Phys. Lett. 56, 1697 (1990).Google Scholar
[8] Bose, S. S., Lee, B., Kim, M. H., Stillman, G. E., and Wang, W. I., J. Appl. Phys. 63, 743 (1988).Google Scholar
[9] Lee, B., Bose, S. S., Kim, M. H., Stillman, G. E., and Wang, W. I., J. Appl. Phys. 67, 255 (1990).Google Scholar
[10] Kadoya, Y., Sato, A., Kano, H., and Sakaki, H., J. Cryst. Growth 111, 280 (1991).Google Scholar
[11] Schubert, E. F., Pfeiffer, L., West, K. W., Luftman, H. S., and Zydzik, G. J., Appl. Phys. Lett. April 25 (1994).Google Scholar
[12] Schubert, E. F., Kopf, R. F., Kuo, J. M., Luftman, H. S., and Garbinski, P. A., Appl. Phys. Lett. 57, 497 (1990).Google Scholar
[13] Northrup, J. E. and Zhang, S. B., Phys. Rev. B47, 6791 (1993).Google Scholar
[14] Schuppler, S., Alder, D. L., Pfeiffer, L. N., West, K. W., Chaban, E. E., and Citrin, P. H., Appl. Phys. Lett. 63, 2357 (1993).Google Scholar
[15] Ploog, K. H., personal communication (1994).Google Scholar
[16] Malik, R. J., Nottenberg, R. N., Schubert, E. F., Walker, J. F., and Ryan, R. W., Appl. Phys. Lett. 53, 2661 (1988).Google Scholar
[17] Schubert, E. F., J. Vac. Sci. Technol. A8, 2980 (1990).Google Scholar
[18] Kobayshi, N., Makimoto, T., and Horikoshi, Y., Appl. Phys. Lett. 50, 1435 (1987).Google Scholar
[19] Micovic, M., Evaldsson, P., Geva, M., Taylor, G. W., Vang, T., and Malik, R. J., Appl. Phys. Lett. 64, 411 (1994).Google Scholar
[20] Schubert, E. F. and Kopf, R. F., J. Cryst. Growth 127, 1037 (1993).Google Scholar