Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-14T17:16:25.582Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping of Ionic Compounds: Solubility Limit and Charge Compensation

Published online by Cambridge University Press:  10 February 2011

Y. Tsur  and
I. Riess
Y. Tsur
Affiliation:
Department of Physics, Technion 32000 Haifa, Israel
I. Riess
Affiliation:
Department of Physics, Technion 32000 Haifa, Israel
Get access

Abstract

An analysis is presented that allows calculating properties of primary solid solutions in ionic crystals. These properties are expressed in terms of properties of the undoped host material and the impurity.

One can calculate the solubilities of the impurities with a knowledge of the concentration of what is defined as the “corresponding native species”, the standard chemical potential of the materials involved and the local shear modulus of the host material.

The changes in concentrations of ionic point defects as well as electron/hole concentrations due to doping are also calculated. In order to do so one has to know the concentrations of the native point defects in the undoped host material and the concentration of the dopant. It is shown that in a native p-type semiconductor (e.g., Cu20) extrinsic donors are mainly self-compensated by ionic defects, while extrinsic acceptors are compensated significantly by holes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 548: Symposia EE – Solid State Ionics V , 1998 , 449
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tsur, Y. and Riess, I.. Z. Physik. Chem., 207:181, 1998.Google Scholar
[2] Weiser, K.. J. Phys. Chem. Solids, 7:118, 1958.Google Scholar
[3] Wagner, C. and Schottky, W.. Z. Physik. Chem., B11:163, 1931.Google Scholar
[4] Maier, J.. Angew. Chem. Int. Ed. Engl., 32:313, 1993.Google Scholar
[5] Tsur, Y. and Riess, I.. Submitted to Phys. Rev. B., 1998.Google Scholar