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Drift Mobility Measurements in Porous Silicon

Published online by Cambridge University Press:  10 February 2011

L. Tsybeskov ,
C. Peng ,
P. M. Fauchet ,
Q. Gu  and
E. A. Schiff
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
Q. Gu
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244
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Abstract

Modulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10−4 cm2/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 825
Copyright
Copyright © Materials Research Society 1996

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