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Dry Etching and Impurity Diffusion for Integrated Optoelectronics

Published online by Cambridge University Press:  21 February 2011

L. A. Coldren
L. A. Coldren*
Affiliation:
ECE and Materials Departments, Univ. of California, Santa Barbara, CA 93106
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Abstract

In this paper the state-of-the-art in the use of dry etching for the fabrication of optoelectronic devices will be briefly reviewed, and to a lesser extent, the use of impurity-induced-disordering in these same structures will be discussed. In both instances, the author will rely heavily upon results from his own laboratory. This is being done in the interest of saving time and effort, although clearly at the risk of omitting some very important contributions from many others.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 237
Copyright
Copyright © Materials Research Society 1988

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References

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