Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-11T12:42:06.875Z Has data issue: false hasContentIssue false
  • English
  • Français

Dry Etching of PZT Films with CF4/Ar High Density Plasma

Published online by Cambridge University Press:  10 February 2011

Chanro Park ,
Jun Hee Cho ,
Chang Ju Choi ,
Yeo Song Seol  and
Il Hyun Choi
Chanro Park
Affiliation:
Semiconductor Advanced Research Division, Hyundai Electronics Industries Co., Ltd.San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyungki-do, 467-701, Korea
Jun Hee Cho
Affiliation:
Semiconductor Advanced Research Division, Hyundai Electronics Industries Co., Ltd.San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyungki-do, 467-701, Korea
Chang Ju Choi
Affiliation:
Semiconductor Advanced Research Division, Hyundai Electronics Industries Co., Ltd.San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyungki-do, 467-701, Korea
Yeo Song Seol
Affiliation:
Semiconductor Advanced Research Division, Hyundai Electronics Industries Co., Ltd.San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyungki-do, 467-701, Korea
Il Hyun Choi
Affiliation:
Semiconductor Advanced Research Division, Hyundai Electronics Industries Co., Ltd.San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyungki-do, 467-701, Korea
Get access

Abstract

Lead-Zirconate-Titanate (PZT) films were etched with CF4/Ar mixed gases in high-density plasmas. Etch characteristics of the PZT film were investigated by using in-situ plasma diagnostic tools in conjunction with the surface analysis after etching. Densities of ionic species such as F+ and CFx+(x=1∼3) and their ion energy distributions within the plasma were measured by a mass spectrometer. Characteristics of the CF4/Ar plasma were obtained by using Langmuir probe measurements. Etch rate of the PZT film was sharply increased up to a peak at 30 % CF4 as the gas ratio of CF4/(Ar+CF4) increased, and then was gradually decreased. After etching, the surface of PZT film was covered with fluorine that was bonded chemically with underlying PZT film. Ion assisted etching mechanism for the PZT was proposed and its validity was confirmed by using the results of the plasma diagnostics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 113
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Parker, L. and Tasch, A., IEEE Circuit & Device Magn. 6, 17, (1990).Google Scholar
2. Sayer, M., Wu, Z., Kumar, C. V. R. Vansant, Amm, D. T., and Griswold, E. M., Can. J. Phys. 70, 1159 (1993).Google Scholar
3. Trolier, S., Gelst, C., Safari, A., Newnham, R. E., and Xu, Q. C., Proc. Sixth IEEE Int. Symp. On Appl. Ferroelectrics, Bethlehem, PA (1986), p. 707.Google Scholar
4. Saito, K., Choi, J. H., Fukuda, T. and Ohnu, M., Jpn. J. Appl. Phys. 31, L1260 (1992).Google Scholar
5. Chung, C. W., Song, I., and Lee, J. S., Mat, Res. Soc, Symp. Proc. 493, 119 (1998).Google Scholar
6. Charlet, B. and Davies, K. E., Mat, Res. Soc, Symp. Proc. 310, 363 (1993).Google Scholar
7. Ikegami, N., Matsui, T. and Kanamori, J., Jpn J. Appl. Phys. 35, 2505 (1996).Google Scholar
8. Choi, C. J., Kwon, O. S., and Seol, Y. S., Jpn. J. Appl. Phys. 37 (1998) (to be published).Google Scholar
9. Lau, W. M., Bello, I., Sayer, M. and Zou, L., Appl. Phys. Lett. 64, 300 (1994).Google Scholar