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Dynamic Recoil Mixing for the Production of Silicon Nitride Films

Published online by Cambridge University Press:  25 February 2011

H. Kheyrandish ,
J.S. Colligon  and
A.E. Hill
H. Kheyrandish
Affiliation:
Thin Film and Surface Research Centre, Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK
J.S. Colligon
Affiliation:
Thin Film and Surface Research Centre, Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK
A.E. Hill
Affiliation:
Thin Film and Surface Research Centre, Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK
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Abstract

In Dynamic Recoil Mixing (DRM) a film of constant thickness is sputtered on to a substrate by using a broad low energy (lkeV) ion beam and is subsequently bombarded by a high energy (10 key) ion beam. During the bombardment process a dynamic balance is maintained between the backsputtering and the deposition of the film, thus providing an ‘unlimited’ source of the dopant material. In this way very high surface dopant concentrations may be achieved which otherwise cannot be reached by more conventional ion beam mixing techniques. Furthermore, by choosing reactive ion species, films of novel chemical compositions may be produced. This technique has been employed to produce silicon nitride films on polished commercial mild steel samples. Measurements of knoop hardness of these films indicate an increase of over 200% whilst the wear and friction properties have shown considerable improvement. Conventionally sputtered silicon films of similar thickness, recoil mixed silicon using argon, or implantation of 10 keV argon and nitrogen to similar doses, indicate only a modest change in tribological characteristic compared to the reactive mixed films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 513
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Dearnaley, G. and Hartley, N.E.W., Proc 4th Conf on Scientific and Industrial Applications of Small Accelerators (IEEE, New York), 20 (1976).Google Scholar
2. Wehner, G.K., Thin Film Dielectrics, Electrochemical Society, New York, 117, (1969).Google Scholar
3. Harper, J.M.E., Cuomo, J.J. and Kaufman, H.R., Ann Rev Mat Sci 13, 413–439 (1983).Google Scholar
4. van der Straten, P.J.M. and Verspui, G., Philips Tech Rev 40 (7), 204–210 (1982).Google Scholar
5. Hartley, N.E.W. and Hirvonen, J.K., Nucl Instrum and Methods 209/210, 933– 940, (1983).Google Scholar
6. Collins, L.E., Perkins, J.G. and Stroud, P.T., Thin Solid Films 4, 41–45 (1969).Google Scholar
7. Hitchman, M.L., Colligon, J.S., Hill, A.E., Southway, C., Kheyrandish, H. and Argyokastritis, P., European Conf on Sensors and their Applications UMIST, Manchester, UK September 1983.Google Scholar
8. Galerie, A. and Dearnaley, G., Nucl Instrum and Methods 209/210, 823–829 (1983).Google Scholar
9. Fischer, G., Hill, A.E. and Colligon, J.S., Vacuum 28, 277 (1978).Google Scholar
10. Fu-Zhai, Cui, Heng-De, L.I. and Xiao-Zhong, Zhang, Nucl Instrum and Methods 209/210, 881–889 (1983).Google Scholar
11. Weissmantel, Chr, Thin Solid Films 32, 11–18 (1976).Google Scholar
12. Kheyrandish, H. and Colligon, J.S.. To be published.Google Scholar
13. Donnelly, S. E., Vacuum 28, 163 (1978).Google Scholar
14. Li, H.T., Liu, P.S., Chang, S.C., Lu, H.C., Wang, H.H. and Tao, K., Nucl Instrum and Methods 182/183, 915–917 (1981).Google Scholar