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Ebic evidence for Carbon-based Gettering in EFG Silicon

Published online by Cambridge University Press:  21 February 2011

R. Gleichmann ,
J. P. Kalejs  and
D. G. Asta
R. Gleichmann
Affiliation:
AdW, Institut für Festkörperphysik und Elektronenmikroskopie, 4020 Halle, Weinberg 2, GDR.
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 16 Hickory Drive, Waitham, Massachusetts 02254, USA.
D. G. Asta
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.
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Abstract

The efficiency of solar cells fabricated from low-oxygen, high-carbon, EFG silicon ribbon can be improved by pre-annealing the ribbon at 1200°C prior to processing. TEM analysis shows that the increased efficiency is not related to a relaxation of the defect structure. Rather, EBIC investigations demonstrate a continuous reduction of the recombination activity of in-grown crystal defects (dislocations, grain boundaries) with increasing duration of the anneal. Since C is the only element in supersaturation at the annealing temperature, a model is suggested in which metallic contaminants are gettered at small carbon clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 181
Copyright
Copyright © Materials Research Society 1985

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References

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