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Effect of a thin Ta layer on the C49-C54 transition.

Published online by Cambridge University Press:  14 March 2011

F. La Via ,
F. Mammoliti ,
M.G. Grimaldi ,
S. Quilici  and
F. Meinardi
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, Catania, Italy
F. Mammoliti
Affiliation:
INFM and Physics Department, Corso Italia 57, Catania, Italy
M.G. Grimaldi
Affiliation:
INFM and Physics Department, Corso Italia 57, Catania, Italy
S. Quilici
Affiliation:
INFM and Material Science Department, Via Cozzi 53, Milano, Italy
F. Meinardi
Affiliation:
INFM and Material Science Department, Via Cozzi 53, Milano, Italy
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Abstract

The effect of a thin Ta layer at the Ti/Si interface on the kinetic of the C49-C54 transition will be shown in detail. The transformation kinetic has been monitored by in situ sheet resistance measurements that, coupled to structural characterisation, allowed to evidence the presence of an intermediate phase before the C54 formation. The temperature of the C54 phase formation decreases with a Ta concentration of 4.5·1015 cm−2 and μ-Raman images of partially transformed samples indicates that the density of C54 grains in presence of Ta is about one order of magnitude higher with respect to pure Ti/Si samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C7.10.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Beyers, R. and Sinclair, R., J. Appl. Phys. 57, 5240 (1985).Google Scholar
[2] Privitera, S., Via, F. La, Grimaldi, M.G. and Rimini, E., Appl. Phys. Lett. 73(26), 3863 (1998).Google Scholar
[3] Mann, R.W., Miles, G.L., Knotts, T.A., Rakowski, D.W., Clevenger, L.A., Harper, J.M.E., D'Heurle, F.M., Cabral, C. Jr. Appl. Phys. Lett. 67, 3729 (1995)Google Scholar
[4] Moroux, A., Zhang, S.L., Kaplan, W., Nygren, S., Östling, M. and Peterson, C.S., Appl. Phys. Lett. 69(7), 975 (1996).Google Scholar
[5] Mouroux, A., Zhang, S.L. and Petersson, C.S., Physical Review B 56(16), 10614 (1997).Google Scholar
[6] Cabral, C. Jr., Clevenger, L.A., Harper, J.M.E., d'Heurle, F.M., Roy, R.A., Lavoie, C., Miles, G.L., Mann, R.W. and Nakos, J.S., Appl. Phys. Lett. 71, 3531 (1997).Google Scholar
[7] Ohmi, S. and Tung, R.T., J. Of Appl. Phys., 86(7),3655 (1999).Google Scholar
[8] Mouroux, A., Epicier, T., Zhang, S.L. and Pinard, P., Phys. Rev. B 60(12), 9165 (1999).Google Scholar