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Effect of as Overpressure on Mn-Induced Layer Disordering in AlGaAs-GaAs Superlattices: An Investigation of the Mn Diffusion Mechanism

Published online by Cambridge University Press:  25 February 2011

C. H. Wu ,
J. I. Maun  and
K. C. Hseh
C. H. Wu
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
J. I. Maun
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
K. C. Hseh
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

Data are presented showing the effect of As overpressure on the diffusion of Mn into an AlGaAs-GaAs superlattice (SL) using MnAs as the diffusion source. Arsenic overpressure has been shown to play a significant role in both impurity-induced layer disordering (IILD) and the microstructure of the Mn-diffused samples. The degree to which layer disordering occurs decreases as As overpressure increases. Furthermore, dislocation loops are observed for the diffusion of Mn under Ga-rich conditions at prolonged diffusion times. Both results, in addition to the effect of As overpressure on the Mn diffusion profile, indicate that Mn diffusion into GaAs or GaAs-AlGaAs heterostructures takes place by an interstitial-substitutional mechanism involving column III vacancies under As-rich conditions and a “kick-out” mechanism involving column III interstitials under Ga-rich conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 73
Copyright
Copyright © Materials Research Society 1993

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References

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