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Effect of CdTe Stoichiometry on the Electrical Properties of CdTe Films

Published online by Cambridge University Press:  10 February 2011

Gil Yong Chung ,
Jin Soo Song  and
Byung Tae Ahn
Gil Yong Chung
Affiliation:
Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
Jin Soo Song
Affiliation:
Korea Institute of Energy Research, PO Box 5, Yusung-gu, Taejon 305-606, Korea
Byung Tae Ahn
Affiliation:
Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
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Abstract

CdTe films have been prepared by a close-spaced sublimation (CSS) process with screenprinted CdTe layers as a source. The electrical resistivity of the CdTe film deposited in O2 was about one order of magnitude lower than that of the film deposited in He. The Cd content in the CdTe films deposited in O2 was smaller than that in the CdTe films deposited in He. No oxygen was detected in the CdTe films deposited in O2. As the Cd/Te ratio decreased, the resistivity of the CdTe films decreased and reached at about 3×104 Ω2.cm. The resistivity decrease by oxygen flow was diminished when the CdTe composition was limited by solid solubility. The above results indicated that the resistivity decrease of CdTe films deposited in O2 was not by due to the oxygen doping but by due to the CdTe stoichiometry change.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 385
Copyright
Copyright © Materials Research Society 1996

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References

1. Chu, T. L., Chu, S. S., Ferekides, C., Wu, C. Q., Britt, J. and Wang, C., J. Appl. Phys. 70, 7608 (1991).Google Scholar
2. Chu, T. L., Solar Cells, 23, 31 (1988).Google Scholar
3. Anthony, T. C., Farenbruch, A. L., Peters, M. G. and Bube, R. H., J. Appl. Phys. 57, 400 (1985).Google Scholar
4. Kim, D. S., Kim, S. Y., Ahn, B. T. and Im, H. B., J. Mater. Sci. in Electronics 5, 17 (1994).Google Scholar
5. Roh, J. S. and Im, H. B., J. Mater. Sci. 23, 2267 (1988).Google Scholar
6. Jun, Y. K. and Im, H. B., J. Electrochem. Soc. 135, 1658 (1988).Google Scholar
7. Kim, H. D., Kim, D. S., Cho, K., Ahn, B. T. and Im, H. B., J. Electrochem. Soc. 141, 3572 (1994).Google Scholar
8. Runyan, W. R., Semiconductor Measurements and Instrumentation (McGraw-Hill Kogakusa, Ltd., 1975) p. 70.Google Scholar
9. Hsu, T. M., Jih, R. J., Lin, P. C., Ueng, H. Y., Hsu, Y. J. and Hwang, H. L., J. Appl. Phys. 59, 3607 (1986).Google Scholar
10. Ivanov, U. S., Stopachinskii, V. B. and Chopin, V. A., Sov. Phys.-Semicond. 5, 83 (1971).Google Scholar
11. Lorenz, M. R., Segall, B. and Woodbury, H. H., Phys. Rev. 134, 751 (1963).Google Scholar