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Effect of Ceria Particle-Size Distribution and Pressure Interactions in Chemo-Mechanical Polishing (CMP) of Dielectric Materials

Published online by Cambridge University Press:  01 February 2011

Naga Chandrasekaran ,
Ted Taylor  and
Gundu Sabde
Naga Chandrasekaran
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, P.O. Box 6 Boise, ID 83707, U.S.A.
Ted Taylor
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, P.O. Box 6 Boise, ID 83707, U.S.A.
Gundu Sabde
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, P.O. Box 6 Boise, ID 83707, U.S.A.
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Abstract

Effect of ceria particle-size distribution and pressure interactions in CMP of dielectric materials and the subsequent surface generation mechanisms is investigated in detail. The removal rate is observed to correlate primarily with the slurry mean particle-size distribution (D50) and reach early rate saturation with decreasing particle size. Slurries with tighter particlesize distribution exhibit a logarithmic relationship with pressure, while a linear relationship is observed for wider distribution slurries. In contrast to the removal rate, surface roughness and degree of microscratches depend primarily on the tail distribution (D99) and increase with increasing particle size. The addition of a selective component to the slurry increases the rate differential between the slurries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F3.2
Copyright
Copyright © Materials Research Society 2003

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